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Low phase noise IP VCO for multistandard communication using a 0.35-μm BiCMOS SiGe technology

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6 Author(s)
A. Coustou ; LAAS-CNRS Res. Lab., Toulouse, France ; D. Dubuc ; J. Graffeuil ; O. Llopis
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We report that a commonly used 0.35-μm, 60-GHz-Fmax BiCMOS SiGe monolithic microwave integrated circuit (MMIC) technology is able to provide very low phase noise signal generation in the X-band frequency range. This statement has been demonstrated using a differential LC voltage-controlled oscillator (VCO) in which varactors are realized with metal-oxide semiconductor (MOS) transistors and inductors with a patterned ground shield technology. This VCO features an output power signal in the range of -5 dBm and exhibits a phase noise of -96 dBc/Hz at a frequency offset of 100kHz from carrier and -120 dBc/Hz at a frequency offset of 1 MHz. The VCO features a tuning range of 430 MHz or 4.3% of its operating frequency. Its power consumption is in the range of 70 mW (200 mW with buffers circuits) for a chip size of 800×1000 μm2 (including RF probe pads).

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:15 ,  Issue: 2 )