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Simulation of the EUV spectrum of Xe and Sn plasmas

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8 Author(s)
Sasaki, Akira ; Adv. Photon Res. Center, Japan Atomic Energy Res. Inst., Kyoto, Japan ; Nishihara, K. ; Koike, Fumihiro ; Kagawa, Takashi
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Complex spectra of Xe and Sn, and their feasibility for use in the lithographic extreme ultraviolet (EUV) source, are investigated. By combining calculations of atomic data using the HULLAC code and the Whiam collisional radiative model with a simple radiative transfer model, the EUV spectrum is shown to originate from a large number of fine structure transitions. Satellite lines of 4d-4f and 4d-5p transitions from near ten times ionized states are found to make a significant contribution to the emission from an optically thick plasma. The wavelengths and transition probabilities of emission lines, charge state distribution, and level population in the plasma, as well as radiation intensity from a laser-produced plasma source have been calculated. The effect of opacity is taken into account assuming a local thermodynamic equilibrium population in the plasma. The calculated result reproduces the observed spectra both for Xe and Sn, showing applicability of the present method to the spectroscopy of hot dense plasmas.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:10 ,  Issue: 6 )