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Novel control architecture for JPHEMT power amplifiers achieving high efficiency EDGE application

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4 Author(s)
L. Albasha ; Sony Semicond. & Electron. Solutions, Basingstoke, UK ; J. C. Clifton ; A. Lawrenson ; A. Eaton

A saturated PA architecture for achieving best-in-class EDGE performance whilst maintaining dual-mode compatibility with GSM is presented. This technique has been developed to utilise the specific advantages the E-Mode J-PHEMT process provides for these applications. This represents a credible solution to the demand of a highly efficient integrated dual-mode (EDGE/GSM) PA control architecture.

Published in:

Radio and Wireless Conference, 2004 IEEE

Date of Conference:

19-22 Sept. 2004