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A high-performance very low-voltage current sense amplifier for nonvolatile memories

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4 Author(s)
A. Conte ; MPG Group, ST-Microelectron., Catania, Italy ; G. L. Giudice ; G. Palumbo ; A. Signorello

A high-performance sense amplifier for nonvolatile memories capable of working under a very low-voltage power supply is presented. The topology of the sense amplifier uses a pure current-mode comparison allowing power supplies lower than 1 V to be used and includes two subcircuits which improve slew rate performance. The sense amplifier was implemented in an EEPROM realized with a 0.18-μm EEPROM technology. Experimental results showed a read access time of about 30 ns with a power supply of 1.65 V.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:40 ,  Issue: 2 )