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Device parameters degradation of nonlinear elements subject to drain and gate voltage stress is examined experimentally. Analysis of metal-oxide-semiconductor field-effect transistor linearity degradation due to stress is given. Effects on radio frequency (RF) circuit linearity are investigated systematically through a SpectreRF simulation based on measured device data.
Device and Materials Reliability, IEEE Transactions on (Volume:4 , Issue: 4 )
Date of Publication: Dec. 2004