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Intentionally inserted oxygen depleted (Ba0.5Sr0.5)TiO3 layers as a model of DC-electrical degradation

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1 Author(s)
T. Hara ; Taiyo Yuden Co. Ltd., Gunma, Japan

The relative dielectric constant versus voltage (εr-V) characteristics and the current density versus electric field (J-E) characteristics of (Ba0.5Sr0.5)TiO3 films, which have intentionally inserted oxygen depleted layers near the bottom electrodes, were investigated as a model of dc-electrical degradation phenomena. Our investigation demonstrated that the intentionally inserted oxygen depleted layer is the cause of the tunneling conduction.

Published in:

IEEE Transactions on Device and Materials Reliability  (Volume:4 ,  Issue: 4 )