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Browse Journals & Magazines > Electronics Letters ...> Volume:25 Issue:23 Help

High-power 0.98 mu m GaInAs strained quantum well lasers for Er3+-doped fibre amplifier

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9 Author(s)
Okayasu, M. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Takeshita, T. ; Yamada, M. ; Kogure, O.
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High-power GaInAs strained quantum well lasers with an emission wavelength of 0.98 mu m, suitable for Er3+-doped fibre amplifier pumping, have been fabricated. A threshold current of 15 mA and a peak output power as high as 85 mW have been obtained for the ridge waveguide structure with AR/HR facet coating. Highly efficient pumping for the 1.536 mu m signals has been confirmed.

Published in:
Electronics Letters  (Volume:25 ,  Issue: 23 )

Date of Publication: 9 Nov. 1989

Page(s):
1563 - 1565
ISSN :
0013-5194
INSPEC Accession Number:
3560504
Digital Object Identifier :
10.1049/el:19891050
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
9 Nov. 1989
Sponsored by :
Institution of Engineering and Technology

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