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A new low-parasitic polysilicon SCR ESD protection structure for RF ICs

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6 Author(s)
Haolu Xie ; Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA ; Haigang Feng ; Rouying Zhan ; A. Wang
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Robust low-parasitic electrostatic discharge (ESD) protection is highly desirable for RF ICs. This letter reports design of a new low-parasitic polysilicon silicon controlled rectifier (SCR) ESD protection structure designed and implemented in a commercial 0.35-μm SiGe BiCMOS technology. The concept was verified by simulation and experiment with the results showing that the new structure has much lower parasitic capacitance (C/sub ESD/) and higher F-factor than that of other ESD protection devices. A small polysilicon SCR structure of 750-μm2 all-inclusive provides a high human body model ESD protection of 3.2 kV while featuring a high F-factor of /spl sim/42 and a low C/sub ESD/ of /spl sim/92.3 fF. The new polysilicon SCR ESD protection structure seems to be an attractive solution to high-GHz RF ICs.

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IEEE Electron Device Letters  (Volume:26 ,  Issue: 2 )