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Comparison of hot carrier-induced RF performance degradation in H-gate and T-gate SOI MOSFETs

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5 Author(s)
Byung-Jin Lee ; Dept. of Electron. Eng., Univ. of Incheon, South Korea ; Jang-Woo Park ; Kyosun Kim ; Chong-Gun Yu
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The RF performance degradation of silicon-on-insulator (SOI) MOSFETs with H-gate and T-gate structures after hot carrier stressing has been investigated. Our experimental results show that the RF performance degradation is more significant than the dc performance degradation after hot carrier stressing. Also, the degradation of the H-gate device is more significant than that of the T-gate device due to the higher drain current. Since the degradation of minimum noise figure is the most significant, the hot carrier effects should be taken into account in the design of LNA using the H-gate device although its RF performance is better than that of the T-gate device.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 2 )