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Microwave and noise performance of SiGe BiCMOS HBT under cryogenic temperatures

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8 Author(s)
Pruvost, S. ; UMR CNRS, Villeneuve d''Ascq, France ; Delcourt, S. ; Telliez, I. ; Laurens, M.
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In this letter, the microwave and noise performance of SiGe heterojunction bipolar transistors (HBTs) has been characterized when cooling down the temperature. It was found that SiGe HBTs (fabricated in the framework of BiCMOS process) exhibit a maximum oscillation frequency fmax of about 292 GHz at 78 K, which represents an increase of about 30% with the value measured at room temperature. The noise performance has also been characterized at cryogenic temperatures, using an original de-embedding approach. Then, using the Hawkin's noise model in conjunction with an accurate small signal equivalent extraction, the four noise parameters have been estimated. The noise figure with a 50 Ω source impedance was measured to be equal to 1.5 dB at 40 GHz at 78 K, which is one of the lowest value reported for BiCMOS SiGe HBT in the millimeter-wave range.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 2 )

Date of Publication:

Feb. 2005

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