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High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

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7 Author(s)
Maeda, T. ; Adv. Semicond. Res. Center, Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki, Japan ; Ikeda, K. ; Nakaharai, S. ; Tezuka, T.
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We demonstrate, for the first time, successful operation of Schottky-barrier source/drain (S/D) germanium-on-insulator (GOI) MOSFETs, where a buried oxide and a silicon substrate are used as a gate dielectric and a bottom gate electrode, respectively. Excellent performance of p-type MOSFETs using Pt germanide S/D is presented in the accumulation mode. The hole mobility enhancement of 50%∼40% against the universal hole mobility of Si MOSFETs is obtained for the accumulated GOI channel with the SiO2-Ge interface.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 2 )