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A 4.15 kV 9.07-mΩ·cm2 4H-SiC Schottky-barrier diode using Mo contact annealed at high temperature

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5 Author(s)
T. Nakamura ; Central Res. Inst. of Electr. Power Ind., Kanagawa, Japan ; T. Miyanagi ; I. Kamata ; T. Jikimoto
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In this letter, we report the fabrication of high-voltage and low-loss 4H-SiC Schottky-barrier diodes (SBDs) with a performance close to the theoretical limit using a Mo contact annealed at high-temperature. High-temperature annealing for the Mo contact was found to be effective in controlling the Schottky-barrier height at 1.2-1.3 eV without degradation of n-factor and reverse characteristics. We successfully obtained a 1-mm2 Mo-4H-SiC SBD with a breakdown voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mΩ·cm2, achieving a best Vb2/Ron value of 1898 MW/cm2. We also obtained a 9-mm2 Mo-4H-SiC SBD with Vb of 4.40 kV and Ron of 12.20 mΩ·cm2.

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IEEE Electron Device Letters  (Volume:26 ,  Issue: 2 )