Skip to Main Content
In this letter, we report the fabrication of high-voltage and low-loss 4H-SiC Schottky-barrier diodes (SBDs) with a performance close to the theoretical limit using a Mo contact annealed at high-temperature. High-temperature annealing for the Mo contact was found to be effective in controlling the Schottky-barrier height at 1.2-1.3 eV without degradation of n-factor and reverse characteristics. We successfully obtained a 1-mm2 Mo-4H-SiC SBD with a breakdown voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mΩ·cm2, achieving a best Vb2/Ron value of 1898 MW/cm2. We also obtained a 9-mm2 Mo-4H-SiC SBD with Vb of 4.40 kV and Ron of 12.20 mΩ·cm2.