Referenced Items are not available for this document.
In this letter, hydrogen plasma immersion ion implantation (H PIII) with Ni-Co-TiN tri-layer is introduced for the first time to enhance the thermal stability of the Ni-silicide for nanoscale CMOS technology. The Ni-silicided poly-Si gate and source/drain showed stable sheet resistance in spite of 650°C, 30 min post-silicidation annealing. The junction leakage current is even improved a lot without degradation of device performance using the proposed method.
Published in:
Electron Device Letters, IEEE
(Volume:26
,
Issue:
2
)
Date of Publication: Feb. 2005
- Page(s):
- 90 - 92
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 8276777
- Digital Object Identifier :
- 10.1109/LED.2004.841863
- Date of Current Version :
- 24 January 2005
- Issue Date :
- Feb. 2005
- Sponsored by :
- IEEE Electron Devices Society
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