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Highly thermal robust NiSi for nanoscale MOSFETs utilizing a novel hydrogen plasma immersion ion implantation and Ni-Co-TiN tri-layer

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15 Author(s)
Jang-Gn Yun ; Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea ; Soon-Young Oh ; Bin-Feng Huang ; Hee-Hwan Ji
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In this letter, hydrogen plasma immersion ion implantation (H PIII) with Ni-Co-TiN tri-layer is introduced for the first time to enhance the thermal stability of the Ni-silicide for nanoscale CMOS technology. The Ni-silicided poly-Si gate and source/drain showed stable sheet resistance in spite of 650°C, 30 min post-silicidation annealing. The junction leakage current is even improved a lot without degradation of device performance using the proposed method.

Published in:

IEEE Electron Device Letters  (Volume:26 ,  Issue: 2 )