By Topic

Carrier-induced refractive index changes in InP-based circular microresonators for low-voltage high-speed modulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Sadagopan, T. ; Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA ; Choi, Seung June ; Sang Jun Choi ; Djordjev, Kostadin
more authors

Optical InP-based microresonator modulators which achieve low-voltage high-bandwidth modulation are presented, where resonant wavelength tuning of a circular resonator by free carrier injection is used as the modulation mechanism. Since thermal effects in small resonant cavities and switching speed limitations posed by minority carrier lifetime are the primary concerns in such types of devices, ion bombardment in microtoroidal structures is used to increase the speed of response. The modulation speed is enhanced by an order of magnitude.

Published in:

Photonics Technology Letters, IEEE  (Volume:17 ,  Issue: 2 )