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Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

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7 Author(s)
D. S. Wuu ; Dept. of Mater. Eng., Nat. Chung Hsing Univ., Taichung, Taiwan ; W. K. Wang ; W. C. Shih ; R. H. Horng
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Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.

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IEEE Photonics Technology Letters  (Volume:17 ,  Issue: 2 )