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Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor

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6 Author(s)
Pramanik, C. ; Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India ; Islam, T. ; Saha, H. ; Bhattacharya, J.
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Porous silicon based piezoresistive pressure sensor has been designed, fabricated and tested in the range of 0 to 1 bar and temperature range of 20°C to 80°C. A suitable signal conditioning analog circuit consisting of constant current generator and an offset adjustable low noise instrumentation amplifier has been designed and tested. The analog output is then digitized through an ADC and fed to FPGA. Architecture for compensation of nonlinear temperature dependence of pressure sensor has been implemented and tested in FPGA. A device model of porous silicon pressure sensor has also been developed with a view to realize a SMART pressure sensor.

Published in:

VLSI Design, 2005. 18th International Conference on

Date of Conference:

3-7 Jan. 2005

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