By Topic

Design, fabrication, testing and simulation of porous silicon based smart MEMS pressure sensor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Pramanik, C. ; Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India ; Islam, T. ; Saha, H. ; Bhattacharya, J.
more authors

Porous silicon based piezoresistive pressure sensor has been designed, fabricated and tested in the range of 0 to 1 bar and temperature range of 20°C to 80°C. A suitable signal conditioning analog circuit consisting of constant current generator and an offset adjustable low noise instrumentation amplifier has been designed and tested. The analog output is then digitized through an ADC and fed to FPGA. Architecture for compensation of nonlinear temperature dependence of pressure sensor has been implemented and tested in FPGA. A device model of porous silicon pressure sensor has also been developed with a view to realize a SMART pressure sensor.

Published in:

VLSI Design, 2005. 18th International Conference on

Date of Conference:

3-7 Jan. 2005