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Circuit modeling of separate absorption, charge and multiplication avalanche photodiode (SACM-APD)

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2 Author(s)
Zarifkar, A. ; Saveh Azad Univ., Iran ; Soroosh, M.

We present a circuit model for separate absorption, charge and multiplication avalanche photodiode (SACM-APD). It is based on the carrier rate equations in the different regions of the device. Using the model we obtain the photocurrent, quantum efficiency, and dark current. As examples, GaAs and InGaAs/InAlAs SACM-APDs are simulated. There is a good correspondence between the simulation and experimental results.

Published in:

Laser and Fiber-Optical Networks Modeling, 2004. Proceedings of LFNM 2004. 6th International Conference on

Date of Conference:

6-9 Sept. 2004

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