Circuit modeling of separate absorption, charge and multiplication avalanche photodiode (SACM-APD)

We present a circuit model for separate absorption, charge and multiplication avalanche photodiode (SACM-APD). It is based on the carrier rate equations in the different regions of the device. Using the model we obtain the photocurrent, quantum efficiency, and dark current. As examples, GaAs and InGaAs/InAlAs SACM-APDs are simulated. There is a good correspondence between the simulation and experimental results.