Referenced Items are not available for this document.
A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6×20 μm2 emitter over a wide range of bias points.
Published in:
Microwave Theory and Techniques, IEEE Transactions on
(Volume:53
,
Issue:
1
)
Date of Publication: Jan. 2005
- Page(s):
- 330 - 335
- ISSN :
- 0018-9480
- INSPEC Accession Number:
- 8258479
- Digital Object Identifier :
- 10.1109/TMTT.2004.839919
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 17 January 2005
- Issue Date :
- Jan. 2005
- Sponsored by :
- IEEE Microwave Theory and Techniques Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
