By Topic

Direct extraction of InP HBT noise parameters based on noise-figure measurement system

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Jianjun Gao ; Inst. for High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany ; Xiuping Li ; Lin Jia ; Hong Wang
more authors

A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6×20 μm2 emitter over a wide range of bias points.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:53 ,  Issue: 1 )