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Direct extraction of InP HBT noise parameters based on noise-figure measurement system

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5 Author(s)
Jianjun Gao ; Inst. for High-Frequency & Semicond. Syst. Technol., Tech. Univ. Berlin, Germany ; Xiuping Li ; Lin Jia ; Hong Wang
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A new method for the determination of the four noise parameters of an InP double heterojunction bipolar transistor (DHBT) based on a 50-Ω noise measurement system without a microwave tuner is presented. The noise parameters are determined based on the noise correlation matrix technique by fitting the measured noise figure of the active device. On-wafer experimental verification up to 20 GHz is presented and a comparison with a tuner based method is given. Good agreement is obtained between measured and calculated results up to 20 GHz for the InP/InGaAs DHBT with a 1.6×20 μm2 emitter over a wide range of bias points.

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:53 ,  Issue: 1 )