By Topic

Fabrication and characterization of low-loss TFMS on silicon substrate up to 220 GHz

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Six, G. ; Inst. d''Electronique de Microelectronique et de Nanotechnologie, Villeneuve d''Ascq, France ; Prigent, G. ; Rius, E. ; Dambrine, G.
more authors

This paper presents the results of the fabrication and characterization up to 220 GHz, of thin-film microstrip (TFMS) transmission-line structures. The transmission lines are fabricated on a low-resistivity silicon substrate (ρ=10 Ω · cm). TFMS lines with a thick dielectric layer (20 μm of benzocyclobutene is used here) present losses of 0.3 dB/mm at 94 GHz and 0.6 dB/mm at 220 GHz. Thus, using this technology, it will be possible to develop monolithic microwave integrated circuits on a silicon substrate.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:53 ,  Issue: 1 )