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30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

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6 Author(s)
Dickson, T.O. ; Dept. of Electr. & Comput. Eng., Univ. of Toronto, Ont., Canada ; LaCroix, M.-A. ; Boret, S. ; Gloria, D.
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Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with S21 of -2.5 dB at 50 GHz, and which offers improved performance and less area (30 μm×30 μm) than planar transformers or microstrip couplers. A compact inductor model is described, along with a methodology for extracting model parameters from simulated or measured y-parameters. Millimeter-wave SiGe BiCMOS mixer and voltage-controlled-oscillator circuits employing spiral inductors are presented with better or comparable performance to previously reported transmission-line-based circuits.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:53 ,  Issue: 1 )

Date of Publication:

Jan. 2005

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