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Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end

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10 Author(s)
Mukhopadhyay, R. ; Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA ; Yunseo Park ; Sen, P. ; Srirattana, N.
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This paper presents reconfigurable RF integrated circuits (ICs) for a compact implementation of an intelligent RF front-end for multiband and multistandard applications. Reconfigurability has been addressed at each level starting from the basic elements to the RF blocks and the overall front-end architecture. An active resistor tunable from 400 to 1600 Ω up to 10 GHz has been designed and an equivalent model has been extracted. A fully tunable active inductor using a tunable feedback resistor has been proposed that provides inductances between 0.1-15 nH with Q>50 in the C-band. To demonstrate reconfigurability at the block level, voltage-controlled oscillators with very wide tuning ranges have been implemented in the C-band using the proposed active inductor, as well as using a switched-spiral resonator with capacitive tuning. The ICs have been implemented using 0.18-μm Si-CMOS and 0.18-μm SiGe-BiCMOS technologies.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:53 ,  Issue: 1 )