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30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs

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7 Author(s)
T. Inoue ; Adv. High-Frequency Device R&D Center, NEC Corp., Shiga, Japan ; Y. Ando ; H. Miyamoto ; T. Nakayama
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This paper describes the small-signal characterization through delay-time analysis and high-power operation of the Ka-band of AlGaN/GaN heterojunction field-effect transistors (FETs). An FET with a gatewidth of 100 μm and a gate length of 0.09 μm has exhibited a current gain cutoff frequency (fT) of 81 GHz, a maximum frequency of oscillation (fmax) of 187 GHz, and a maximum stable gain of 10.5 dB at 30 GHz (8.3 dB at 60 GHz). Delay-time analysis has demonstrated channel electron velocities of 1.50×107 to 1.75×107 cm/s in a gate-length range of 0.09-0.25 μm. State-of-the-art performance-saturated power of 5.8 W with a linear gain of 9.2 dB and a power-added efficiency of 43.2%-has been achieved at 30 GHz using a single chip having a gatewidth of 1.0 mm and a gate length of 0.25 μm.

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IEEE Transactions on Microwave Theory and Techniques  (Volume:53 ,  Issue: 1 )