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A 4-Mb toggle MRAM based on a novel bit and switching method

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14 Author(s)
Engel, B.N. ; Freescale Semicond., Chandler, AZ ; Akerman, J. ; Butcher, B. ; Dave, R.W.
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A 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum2. The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented

Published in:

Magnetics, IEEE Transactions on  (Volume:41 ,  Issue: 1 )

Date of Publication:

Jan. 2005

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