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Browse Journals & Magazines > Magnetics, IEEE Transactions ...> Volume:41 Issue:1 Help

Effects of temperature, deposition conditions, and magnetic field on Ni80Fe20/Fe50Mn50/Ni80Fe20/Al2O3/Co and Ni80Fe20/Al2O3/Co magnetic tunnel junctions

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2 Author(s)
Chen, F.H. ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Ng, V.

We fabricated magnetic tunnel junctions (MTJs) of Ni80Fe20/Fe50Mn50/Ni80Fe20/Al2O3/Co exchange-biased structures and Ni80Fe20/Al2O3/Co nonexchange-biased structures using shadow masks, with and without an in situ magnetic field. We magnetically annealed the junctions at 230°C for 15 min after deposition. Low-temperature measurements revealed an increase in junction resistance and tunneling magnetoresistance and enhancement of the exchange field for exchange-biased junctions. Post-deposition magnetic annealing at an optimum predicted temperature did not improve the quality of the Al2O3 but instead degraded it, highlighting the importance of other contributing factors. MTJs fabricated with an in situ magnetic field without any post-deposition magnetic annealing produced the most desirable results from the perspective of magnetic application technology.

Published in:
Magnetics, IEEE Transactions on  (Volume:41 ,  Issue: 1 )

Date of Publication: Jan. 2005

Page(s):
116 - 121
ISSN :
0018-9464
INSPEC Accession Number:
8268004
Digital Object Identifier :
10.1109/TMAG.2004.840128
Product Type:
Journals & Magazines
Date of Current Version :
17 January 2005
Issue Date :
Jan. 2005
Sponsored by :
IEEE Magnetics Society

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