By Topic

Effects of temperature, deposition conditions, and magnetic field on Ni80Fe20/Fe50Mn50/Ni80Fe20/Al2O3/Co and Ni80Fe20/Al2O3/Co magnetic tunnel junctions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Chen, F.H. ; Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore ; Ng, V.

We fabricated magnetic tunnel junctions (MTJs) of Ni80Fe20/Fe50Mn50/Ni80Fe20/Al2O3/Co exchange-biased structures and Ni80Fe20/Al2O3/Co nonexchange-biased structures using shadow masks, with and without an in situ magnetic field. We magnetically annealed the junctions at 230°C for 15 min after deposition. Low-temperature measurements revealed an increase in junction resistance and tunneling magnetoresistance and enhancement of the exchange field for exchange-biased junctions. Post-deposition magnetic annealing at an optimum predicted temperature did not improve the quality of the Al2O3 but instead degraded it, highlighting the importance of other contributing factors. MTJs fabricated with an in situ magnetic field without any post-deposition magnetic annealing produced the most desirable results from the perspective of magnetic application technology.

Published in:

Magnetics, IEEE Transactions on  (Volume:41 ,  Issue: 1 )