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Non-traditional, non-volatile memory based on switching and retention phenomena in polymeric thin films

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2 Author(s)
J. H. Kriegerand ; Boston Res. Labs., Woburn, MA, USA ; S. M. Spitzer

During the last few years significant efforts have been undertaken in the search to understand the physical principles and to realize and implement the "universal memory". This is an idealization, which would combine high-speed recording and erasing (dynamic memory) and long retention time (non-volatile memory) into one memory. Our view of the ideal memory cell is a two terminal device, which consists of two electrodes with the active layer(s) between them. The material of the active layer must change its resistance dependent on the magnitude and polarity of the applied electric field and retain this resistance value after removal of the electric field. There are many published reports on the effects of switching and memory in various thin film systems such as: inorganic and organic dielectrics, inorganic and organic semiconductor materials, polymeric materials, etc. This paper focuses on the physical properties of conjugated polymers and related materials. A portion of this paper addresses the properties of superionic materials and their ability to transport ions to the active film. Emphasis is placed on the phenomena of electronic drift, solid-state ionic mobility, ionic injection and doping

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Non-Volatile Memory Technology Symposium, 2004

Date of Conference: