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This work presents an electrothermal model of an insulated-gate bipolar transistor (IGBT) switch suitable for the simulation of switching and conduction losses in a large class of voltage-sourced converter (VSC)-based flexible ac transmission systems (FACTS) devices. The model is obtained by mathematical derivation of loss equations from the known submicrosecond device switching characteristics, and through the selection of appropriate differential equation parameters for representing the thermal performance. The model is useful in determining the device's heat generation, its junction temperature, as well as the cooling performance of the connected heat sinks. The model provides accurate results without recourse to an unreasonably small time step.