A three-dimensional topographical simulator PEACE (photo and electron beam lithography analyzing computer engineering system) is discussed. One of the difficulties in resist topographical simulation exists due to the three-dimensional resist development algorithm. An algorithm based on the cell removal model provides accurate and stable results for the three-dimensional resist development process. The program has been adapted to a supercomputer for quick computation. The simulator can successfully perform the three-dimensional development in an absolutely stable manner, and good agreement can be obtained with experiments for both photo and electron beam lithography
Published in:
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
(Volume:10
,
Issue:
6
)
Date of Publication: Jun 1991