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A 4-Mb 0.18-μm 1T1MTJ toggle MRAM with balanced three input sensing scheme and locally mirrored unidirectional write drivers

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7 Author(s)
T. W. Andre ; Freescale Semicond., Austin, TX, USA ; J. J. Nahas ; C. K. Subramanian ; B. J. Garni
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A 4-Mb toggle MRAM, built in 0.18-μm five level metal CMOS technology, uses a 1.55 μm2 bit cell with a single toggling magneto tunnel junction to achieve a chip size of 4.5 mm × 6.3 mm. The memory uses unidirectional programming currents controlled by locally mirrored write drivers to apply a robust toggle write sequence. An isolated read architecture driven by a balanced three input current mirror sense amplifier supports 25-ns cycle time asynchronous operation.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:40 ,  Issue: 1 )