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Bias-dependence of the intrinsic element values of InGaAs/InAlAs/InP inverted heterojunction bipolar transistor

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6 Author(s)
Meskoob, B. ; Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA ; Prasad, S. ; Vai, M. ; Vlcek, James C.
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The small-signal S-parameters of an inverted InGaAs/InAlAs/InP heterojunction bipolar transistor are measured at 39 bias points covering the entire useful bias region. Small-signal model fitting is performed at each bias point. The results of the small-signal model fitting show that, in this device, it is sufficient to take five intrinsic elements of the model to be bias dependent. The methodology and the results of the simulations are presented

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:40 ,  Issue: 5 )