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Identification of perimeter depletion and emitter plug effects in deep-submicrometer, shallow-junction polysilicon emitter bipolar transistors

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5 Author(s)
Burghartz, J.N. ; IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA ; Sun, J.Y.-C. ; Stanis, C.L. ; Mader, S.R.
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Two new types of narrow-emitter effects are identified in shallow and narrow-junction polysilicon emitter bipolar transistors. These effects result from a lower doping concentration close to the emitter perimeter of large devices (perimeter depletion effect) or in very-narrow-emitter devices where the polysilicon plugs up the emitter window (emitter plug effect). The consequence is a locally shallower emitter junction which causes a reduced collector current density and a nonideal base current due to a partial overlap of the emitter-base space-charge region with the poly/monosilicon interface. The nonuniform doping in the polysilicon is verified by energy-dispersive X-ray spectroscopy (EDX) measurements. Electrical measurements give a clear indication of the emitter plug effect for two different self-aligned transistor structures, and further evidence is given by a comparison of various poly emitter processes

Published in:

Electron Devices, IEEE Transactions on  (Volume:39 ,  Issue: 6 )

Date of Publication:

Jun 1992

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