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Modeling mechanical stress effect on dopant diffusion in scaled MOSFETs

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8 Author(s)
Yi-Ming Sheu ; Dept. of Adv. Device Technol., Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan ; Sheng-Jier Yang ; Chih-Chiang Wang ; Chih-Sheng Chang
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The effect of shallow trench isolation mechanical stress on MOSFET dopant diffusion has become significant, and affects device behavior for sub-100-nm technologies. This paper presents a stress-dependent dopant diffusion model and demonstrates its capability to reflect experimental results for a state-of-the-art logic CMOS technology. The proposed stress-dependent dopant diffusion model is shown to successfully reproduce device characteristics covering a wide range of active area sizes, gate lengths, and device operating conditions.

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IEEE Transactions on Electron Devices  (Volume:52 ,  Issue: 1 )