Referenced Items are not available for this document.
The effect of shallow trench isolation mechanical stress on MOSFET dopant diffusion has become significant, and affects device behavior for sub-100-nm technologies. This paper presents a stress-dependent dopant diffusion model and demonstrates its capability to reflect experimental results for a state-of-the-art logic CMOS technology. The proposed stress-dependent dopant diffusion model is shown to successfully reproduce device characteristics covering a wide range of active area sizes, gate lengths, and device operating conditions.
Published in:
Electron Devices, IEEE Transactions on
(Volume:52
,
Issue:
1
)
Date of Publication: Jan. 2005
- Page(s):
- 30 - 38
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 8249840
- Digital Object Identifier :
- 10.1109/TED.2004.841286(410) 52
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 27 December 2004
- Issue Date :
- Jan. 2005
- Sponsored by :
- IEEE Electron Devices Society
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