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Two-dimensional analytical threshold voltage model for DMG Epi-MOSFET

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4 Author(s)
K. Goel ; Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India ; M. Saxena ; M. Gupta ; R. S. Gupta

A two-dimensional (2-D) analytical model of a dual material gate (DMG) epitaxial (Epi)-MOSFET for improved, SCEs, hot electron effects, and carrier transport efficiency is presented. Using a two-region polynomial potential distribution and a universal boundary condition, we calculated the 2-D potential and electric field distribution along the channel. An expression for threshold voltage for short-channel DMG Epi-MOSFETs is also derived. The ratio of gate lengths has been varied to show which gate length ratio gives the best performance. The analytical results have been validated by the 2-D device simulator ATLAS over a wide range of device parameters and bias conditions.

Published in:

IEEE Transactions on Electron Devices  (Volume:52 ,  Issue: 1 )