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Development of nuclear radiation detectors with energy resolution capability based on CdTe-n+-GaAs heterojunction diodes

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7 Author(s)
Niraula, M. ; Graduate Sch. of Eng., Nagoya Inst. of Technol., Japan ; Yasuda, K. ; Uchida, K. ; Nakanishi, Y.
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CdTe-n+-GaAs heterojunction diodes for room-temperature nuclear radiation detectors have been developed and demonstrated. The heterojunction diode was fabricated by growing a thin n-type CdTe buffer layer followed by the undoped p-like CdTe layer of about a 100 μm thickness on the n+-GaAs substrates using metal-organic vapor phase epitaxy. The diode detectors exhibited good rectification property and had the reverse leakage currents of a few μA/cm2 at 40 V bias. The detector clearly demonstrated its energy resolution capability by resolving the 59.54 keV gamma peak from the 241Am radioisotope during the radiation detection test.

Published in:

Electron Device Letters, IEEE  (Volume:26 ,  Issue: 1 )

Date of Publication:

Jan. 2005

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