Referenced Items are not available for this document.
Low-threshold AlGaInP ( lambda L=635.6 nm) multiquantum-well laser diodes have been successfully fabricated by MOCVD using
Published in:
Electronics Letters
(Volume:28
,
Issue:
10
)
Date of Publication: 7 May 1992
- Page(s):
- 905 - 906
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4179675
- Digital Object Identifier :
- 10.1049/el:19920574
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 7 May 1992
- Sponsored by :
- Institution of Engineering and Technology
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