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Low-threshold 630 nm-band AlGaInP multiquantum-well laser diodes grown on misoriented substrates

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6 Author(s)
Shono, M. ; Sanyo Electr. Co., Osaka, Japan ; Hamada, H. ; Honda, S. ; Hiroyama, R.
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Low-threshold AlGaInP ( lambda L=635.6 nm) multiquantum-well laser diodes have been successfully fabricated by MOCVD using

Published in:

Electronics Letters  (Volume:28 ,  Issue: 10 )