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High total dose tolerance of prototype silicon nanocrystal non-volatile memory cells

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3 Author(s)
Petkov, M.P. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Bell, L.D. ; Atwater, Harry A.

We report the first results pertinent to the high total dose tolerance of Si nanocrystal nonvolatile memory cells. The studied prototype nc-Si field effect transistors made by ion implantation retained virtually unchanged write/erase characteristics, typical for the two-state devices, to cumulative doses exceeding 15Mrad(Si).

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Nuclear Science, IEEE Transactions on  (Volume:51 ,  Issue: 6 )