Cart (Loading....) | Create Account
Close category search window
 

Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN cap Layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Karmarkar, A.P. ; Interdisciplinary Program in Mater. Sci., Vanderbilt Univ., Nashville, TN, USA ; Jun, B. ; Fleetwood, D.M. ; Schrimpf, R.D.
more authors

1.8 MeV proton radiation-induced degradation in high electron mobility transistors with Si-doped AlxGa1-xN and thick GaN cap layers is studied up to a fluence of 1×1015 protons/cm2. The thick GaN cap layer reduces sheet charge modulation induced by the surface states, as it electrostatically separates the active device layers from the surface, thereby enhancing the device performance. The devices exhibit good tolerance up to 1014 protons/cm2, with displacement damage being the primary degradation mechanism. Charged defect centers introduced by proton radiation in the active device layers degrade carrier mobility and sheet carrier density. Proton radiation alters the barrier height at the Schottky gate and increases the resistance of the thin film structure.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:51 ,  Issue: 6 )

Date of Publication:

Dec. 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.