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Proton radiation response of monolithic Millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology

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11 Author(s)
Kuo, W.-M.L. ; Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Yuan Lu ; Floyd, B.A. ; Haugerud, B.M.
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This work presents the first experimental results on the effects of 63.3 MeV proton irradiation on 60 GHz monolithic point-to-point broadband space data link transceiver building blocks implemented in a 200 GHz SiGe heterojunction bipolar transistor (HBT) technology. A SiGe low-noise amplifier and a SiGe voltage-controlled oscillator were each irradiated to proton fluences of 5.0×1013 p/cm2. The device and circuit level performance degradation associated with these extreme proton fluences is found to be minimal, suggesting that such SiGe HBT transceivers should be robust from a proton tolerance perspective for space applications, without intentional hardening at either the device or circuit level.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:51 ,  Issue: 6 )