System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

Total dose effects on double gate fully depleted SOI MOSFETs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Jun, B. ; Vanderbilt Univ., Nashville, TN, USA ; Xiong, Hao D. ; Sternberg, A.L. ; Cirba, C.R.
more authors

Total ionizing dose effects on fully-depleted (FD) silicon-on-insulator (SOI) transistors are studied when the devices are operated in single gate (SG) and double gate (DG) mode. The devices exhibit superiority in mobility and drain current when operated in DG mode compared to SG mode. Moreover, the dc characteristics of DG operated device are less vulnerable to total dose radiation induced damage. In particular, radiation-induced interface traps have less electrical effect in DG mode operation.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:51 ,  Issue: 6 )