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Using surface charge analysis to characterize the radiation response of Si/SiO2 structures

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4 Author(s)
J. W. Stacey ; Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA ; R. D. Schrimpf ; D. M. Fleetwood ; K. C. Holmes

We show that a surface charge analyzer (SCA) can be used to measure the total-dose radiation response of oxide-semiconductor structures noninvasively. A comparison of SCA measured radiation-induced oxide-trap charge and interface-trap densities with values from conventional metal oxide semiconductor (MOS) and mercury probe C--V measurements shows good agreement up to the highest total doses considered here (1000 krad(SiO2)). The measured values of oxide-trap charge and interface-trap densities monotonically increase as total dose increases. Surface charge analysis has an advantage over the C--V measurement method because it does not require a direct gate contact for measurement. The SCA also does not require extra device fabrication or special test structures for measurement, circumventing the need for post-processing that could alter the charge trapping within a thermal oxide.

Published in:

IEEE Transactions on Nuclear Science  (Volume:51 ,  Issue: 6 )