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Reliability enhancement in high-performance MOSFETs by annular transistor design

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4 Author(s)
D. C. Mayer ; Aerosp. Corp., El Segundo, CA, USA ; R. C. Lacoe ; E. E. King ; J. V. Osborn

The use of annular MOSFET design, which has demonstrated total-dose radiation immunity in CMOS circuits, can improve the hot-carrier reliability of CMOS circuits by reducing the drain electric field compared to conventionally designed MOSFETs. A theoretical analysis of the annular n-MOSFET in saturation verifies the reduction of the drain electric field in properly designed MOSFETs. Hot-carrier data for an enclosed 0.25-μm n-MOSFET demonstrate an improvement in hot-carrier lifetime by more than 3x compared to a conventional device in the same technology.

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IEEE Transactions on Nuclear Science  (Volume:51 ,  Issue: 6 )