By Topic

Assessment of neutron- and proton-induced nuclear interaction and ionization models in Geant4 for Simulating single event effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Truscott, P. ; Space Dept., QinetiQ Ltd, Hampshire, UK ; Fan Lei ; Dyer, C.S. ; Frydland, A.
more authors

This paper examines the performance of the Geant4 radiation transport toolkit for the simulation of energy deposition from proton- and neutron-nuclear interactions in silicon microelectronics. The results show that for large (∼300 μm) to small (∼0.5 μm) feature-size devices, the nucleon-nuclear and electromagnetic interaction models within the toolkit provide energy deposition spectra and single event upset rate predictions that are in good agreement with experimental data. The new Binary Cascade and Classical Cascade models, together with the nuclear pre-equilibrium model in Geant4, do not significantly differ in the results they produce. For small feature-size devices, it is shown that it is necessary to consider the effects of ionization by particles produced by nuclear interactions several micrometers above the sensitive volume.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:51 ,  Issue: 6 )