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Heavy metal doping of CdTe crystals

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7 Author(s)
Saucedo, E. ; Compound Semicond. Group, Univ. of Uruguay, Montevideo, Uruguay ; Fornaro, L. ; Sochinskii, N.V. ; Cuna, A.
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CdTe crystals doped with several heavy metals (Hg, Tl, Pb, and Bi) in the concentration range of 1017-1018 at/cm3 have been grown by the vertical Bridgman method. The structural quality and uniformity of the crystals was verified by chemical determination of etch pits density and by X-ray rocking curves. Inductively coupled plasma-mass spectroscopy (ICP-MS) was employed for evaluating the dopant concentration and foreign impurities. Low-temperature photoluminescence (PL) measurements were performed on the crystals in the 1.2-1.6 eV energy range. The crystals electrical properties were studied by Hall and I-V measurements. (D-X) and (DAP) lines dominate the PL spectra for CdTe crystals, suggesting n-type conductivity and the presence of a compensation mechanism due to the heavy metal dopant incorporation. Investigating the 1.4 eV band, we obtained the Huang-Rhys parameter, the principal energy of zero phonon line and the energy of longitudinal optical phonon for each dopant. A particular PL line at 1.473 eV, correlated to MTe (M=heavy metal) defect centers, was found. It was found that the heavy metal-doped CdTe crystals have resistivity values in the range 108-1010 Ω·cm, with maximum values for Bi- and Hg-doped materials. Also, these materials show a higher dark current stability than the ones doped with the other heavy metals. Only detectors made from Hg-doped crystals gave response to X and γ radiation.

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Nuclear Science, IEEE Transactions on  (Volume:51 ,  Issue: 6 )