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Optical manipulation of magnetism in III-V-based ferromagnetic semiconductors and its device application

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1 Author(s)
Munckata, H. ; Tokyo Inst. of Technol., Yokohama, Japan

In the last decade, the study of physics and application of spin-related phenomena has become one of the important emerging fields born from the advanced studies of both semiconductors and magnetic materials. This presentation reviews a few examples of such activities that are taking place around the world. This is followed by the experimental results concerning the optical manipulation of magnetism in (III,Mn)V ferromagnetic semiconductors. Finally, a polarized light detector is discussed and its potential application with a spin LED. Partial magnetization reversal by the electrical injection of hole spins is also reviewed on the basis of results obtained from (Ga,Mn)As-based magnetic tunnel junctions.

Published in:

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

Date of Conference:

21-23 June 2004