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Air-stable chemical doping of carbon nanotube transistors [CNFETs]

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4 Author(s)
Chen, N. ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA ; Klinke, C. ; Afzali, Ali ; Avouris, P.

In this paper, we have successfully demonstrated, for the first time, air-stable chemical p-doping of CNFETs via charge transfer; introduced tunability of the Vth, transformed scaled CNFETs from ambipolar to unipolar, improved Ion by 2-3 orders of magnitude, suppressed minority carrier injection (immunity from drain induced Ioff degradation from intrinsic Schottky barrier CNFET), yielding an excellent Ion/Ioff ratio of 106, and demonstrated excellent DIBL-like behavior.

Published in:

Device Research Conference, 2004. 62nd DRC. Conference Digest [Includes 'Late News Papers' volume]

Date of Conference:

21-23 June 2004