By Topic

Effect of nitrogen ions on the properties of InGaAsN quantum wells grown by plasma-assisted molecular beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Miguel-Sanchez, J. ; Dept. de Ingenieria Electron., Ciudad Univ., Madrid, Spain ; Guzman, A. ; Ulloa, J.M. ; Hierro, A.
more authors

The advantages of the InGaAsN/GaAs system comprising the active layers of single- and multi-quantum well laser diodes (emission wavelengths in the second and third optical windows, AlGaAs reflectors etc.), in comparison with other materials, make this quaternary material an interesting field for study. The monoatomic nitrogen species required for the growth of InGaAsN layers by molecular beam epitaxy, using a radiofrequency power source, are mixed in the plasma with ionised species, among others. The authors present a detailed characterisation of the plasma in the vicinity of the growing surface by measuring its I-V characteristics. A magnetic field was used to deflect ions and their effect on the properties of InGaAsN quantum wells was observed. These ionised species were observed to damage the surface, introducing nonradiative centres. As observed by photoluminescence experiments, the optical quality is improved as the density of ions impinging on the surface is reduced. Rapid thermal annealing experiments were also carried out, showing that the observed PL intensity improvement is related to the ion concentration in the quantum wells.

Published in:

Optoelectronics, IEE Proceedings -  (Volume:151 ,  Issue: 5 )