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AC and DC characteristics of carbon nanotube field-effect transistors

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1 Author(s)
Appenzeller, J. ; IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA

Recent results on the DC as well as AC characteristics of carbon nanotube field-effect transistors (CN-FETs) are presented. Experimental data is discussed in the context of an extended Schottky barrier model and the potential of CNFETs for high frequency applications is elucidated.

Published in:

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Date of Conference:

13-14 Sept. 2004