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LDMOSFET and SiGe:C HBT integrated in a 0.25 μm BiCMOS technology for RF-PA applications

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8 Author(s)
D. Muller ; STMicroelectronics, Crolles, France ; A. Giry ; C. Arnaud ; C. Arricastres
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An optimized LDMOSFET and a SiGe:C HBT for PA design, integrated in a BiCMOS technology, are described in this article. Each device of interest, for PA applications, is highlighted via its electrical performance - static, small and large signal.

Published in:

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Date of Conference:

13-14 Sept. 2004