By Topic

Optimization of vertical profiles of SiGe HBT/BiCMOS by promoting emitter diffusion process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
M. Miura ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; H. Shimamoto ; R. Hayami ; A. Kodama
more authors

A new concept, promoting emitter diffusion (PED) process, by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation frequency exceeded 200 GHz when the annealing temperature was increased from 885°C to 1000°C. This PED process concept is based on the fact that the increased phosphorus diffusion can more than compensate for increased boron diffusion and decreased base thickness.

Published in:

Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting

Date of Conference:

13-14 Sept. 2004