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Millimeter-wave power performance of ion-implanted In/sub x/Ga/sub (1-x)/As on GaAs metal semiconductor field-effect transistors

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4 Author(s)
Feng, M. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Lau, C.L. ; Brusenback, P. ; Kushner, L.J.

Millimeter-wave power performance achieved by ion-implanted InGaAs-GaAs MESFETs with a gate length of 0.25 mu m is described. When a device with a gate width of 150 mu m was measured at 22 GHz, an output power of 95 mW, a power-added efficiency of 33%, and an associated gain of 7.3 dB were observed. At an output power of 93 mW, a power-added efficiency of 25% and an associated gain of 4 dB were obtained at 44 GHz. When a device with a gate width of 200 mu m was measured at 60 GHz, an output power of 121 mW with 3-dB associated gain and 13% power-added efficiency were observed.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:2 ,  Issue: 6 )